A number of fast wafer level electromigration test techniques, isothermal, constant current and SWEAT are widely used for interconnect reliability evaluation and process monitoring. In this paper, we present data from alternative wafer level EM technique, self-heated electromigration test on via chain structure. The self-heated test methodology gives the ability to independently control both stress temperature and current density. In addition, a comparison of self-heated via test and conventional package level test has been done. Furthermore, we also successfully demonstrate that this technique is an effective tool for process improvement and optimization.
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