Phase distortion measurements for saturated MESFETs loaded witharbitrary impedance terminations

摘要

A measurement method is developed and implemented tosimultaneously perform phase distortion, output power and power-addedefficiency measurements for arbitrary load impedances over a widedynamic power range on saturated MESFETs. The phase distortion ismeasured by a precise phase shifter and a phase comparator, whichconsists of two quadrature hybrids, two combiners and a matched pair ofdiode-detectors. A 30 dBm sweeping power range, including about 10~15dBm beyond compression, has been performed on a GaAs MESFET NE8001 at1.7 GHz for different loads