首页> 外文会议>Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 1992. Technical Digest 1992., 14th Annual IEEE >A stacked DCFL structure applied to a prescalar IC and investigatedfor ASICs
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A stacked DCFL structure applied to a prescalar IC and investigatedfor ASICs

机译:应用于预分频IC的堆叠DCFL结构并进行了研究用于ASIC

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The stacked DCFL (direct coupled FET logic) structure makes itpossible to have supply voltage compatibility to Si LSIs with IC circuitcurrent reduction. The idea is to stack DCFL circuits by utilizing theSchottky FET characteristic, which makes the total DCFL circuit currenthold constantly independent of any logic conditions. This circuitstructure was applied to the divide by 64/65 or 128/129 prescalar IC,which operates at 2.5 GHz on a supply voltage of 3 V with circuitcurrent of 9.8 mA. Virtual ground stability was investigated to applythe stacked DCFL to application-specific integrated circuits (ASICs).The stability of the virtual ground was confirmed by modeling thestacked DCFL circuit and simulating the circuit using SPICE
机译:堆叠式DCFL(直接耦合FET逻辑)结构使其成为 可以与具有IC电路的Si LSI具有电源电压兼容性 电流减少。这个想法是通过利用 肖特基FET特性,使DCFL电路总电流 始终独立于任何逻辑条件。这个电路 该结构应用于64/65或128/129预分频IC的分频, 在电路上以3 V的电源电压在2.5 GHz下工作 电流为9.8 mA。对虚拟地面稳定性进行了研究以应用 堆叠的DCFL到专用集成电路(ASIC)。 通过对虚拟地面进行建模,可以确认虚拟地面的稳定性。 堆叠DCFL电路并使用SPICE仿真电路

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