Monolithic GaAs W-band pseudomorphic MODFET amplifiers

摘要

A unique realization of a single-stage monolithic GaAsW-band amplifier based on InGaAs-AlGaAs pseudomorphic (PM)MODFET devices is reported. This work reflects a number of significantaccomplishments: (1) superior control of MBE to grow the PM layers, (2)well-developed electron-beam 0.1 μm mushroom-gate technology, (3)reliable physical and equivalent-circuit models of device behavior, (4)layouts that minimize parasitics, and (5) a dual-medium circuit approachconsisting of coplanar waveguide (CPW) and microstrip on opposite facesof a 100 μm-thick GaAs substrate. A peak gain of 4.5 dB at 92 GHz forone of the amplifiers was achieved. The measured gain is in goodagreement with the model predictions