The CAP-FET, a scaleable MEMS sensor technology on CMOS withprogrammable floating gate

摘要

A new MEMS sensor architecture is presented that convertsmechanical displacement of a conductive diaphragm directly to a current.The electrical bias on the mechanical element is capacitively coupled toan electrically floating MOS gate that controls the sensor outputcurrent. The sensor is manufactured using a process module that slotsdirectly in to a CMOS process. Both the sensor architecture and processmodule will scale with shrinking CMOS generations. Injection of chargeonto the floating gate can be used to program the sensor thresholdvoltage. The sensor architecture has been demonstrated as a pressuresensor on a CMOS process