High temperature operated (~250 K) photovoltaic-photoconductive(PV-PC) mixed-mode InAs/GaAs quantum dot infrared photodetector

机译：高温（〜250 K）光电光电导（PV-PC）混合模式InAs / GaAs量子点红外光电探测器

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The 10 stacked self-assembled InAs/GaAs quantum dot infraredphotodetector (QDIP) operated in 2.5 to 7 μm range by photovoltaic(PV) and photoconductive (PC) mixed-mode near room temperature (~250 K)was demonstrated. The specific peak detectivity D* is 2.4×108 cm-Hz1/2/W at 250 K. The confining Al_xGa_1-xAs barrier layers on both sides of stacked QD structureare the key to the high temperature operation

机译：10个堆叠的自组装InAs / GaAs量子点红外光电检测器（QDIP）在2.5至7μm的范围内运行（PV）和光电导（PC）接近室温（〜250 K）的混合模式被证明了。比峰检测灵敏度D *为2.4×10 ^{8
cm-Hz ^{1/2 / W在250 K.
堆叠QD结构两侧的_{1-x As阻挡层
是高温操作的关键}}}

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《Electron Devices Meeting, 2000. IEDM Technical Digest. International》||p.597-600|共4页
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Shiang-Feng Tang; Shih-Yen Lin; Si-Chen Lee; Chieh Hsiung Kuan; Ya-Tung Cherng;
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1. Long wave infrared InAs-InGaAs quantum-dot infrared photodetector with high operating temperature over 170K [J] . Lu XJ, Vaillancourt J, Meisner MJ, Journal of Physics, D. Applied Physics: A Europhysics Journal . 2007,第19期

机译：工作温度超过170K的长波红外InAs-InGaAs量子点红外光电探测器
2. High operating temperature 320 X 256 middle-wavelength infrared focal plane array imaging based on an InAs/InGaAs/InAIAs/InP quantum dot infrared photodetector [J] . S. Tsao, H. Lim, W. Zhang, Applied Physics Letters . 2007,第20期

机译：基于InAs / InGaAs / InAIAs / InP量子点红外光电探测器的高工作温度320 X 256中波长红外焦平面阵列成像
3. Enhancement in Peak Detectivity and Operating Temperature of Strain-Coupled InAs/GaAs Quantum Dot Infrared Photodetectors by Rapid Thermal Annealing [J] . Ghadi Hemant, Shetty Saikalash, Adhikary Sourav, Nanotechnology, IEEE Transactions on . 2015,第4期

机译：快速热退火提高应变耦合的InAs / GaAs量子点红外光电探测器的峰值检测率和工作温度
4. High temperature operated (/spl sim/250 K) photovoltaic-photoconductive (PV-PC) mixed-mode InAs/GaAs quantum dot infrared photodetector [C] . Shiang-Feng Tang, Shih-Yen Lin Electron Devices Meeting, 2000. IEDM Technical Digest. International . 2000

机译：高温操作（/ spl sim / 250 K）光伏光电导（PV-PC）混合模式InAs / GaAs量子点红外光电探测器
5. Quantum dot infrared photodetectors operating at room temperature: Modeling, experiments and analysis. [D] . Lim, Ho-Chul. 2007

机译：在室温下运行的量子点红外光电探测器：建模，实验和分析。
6. Long-wavelength room-temperature luminescence from InAs/GaAs quantum dots with an optimized GaAsSbN capping layer [O] . Antonio D Utrilla, Jose M Ulloa, Alvaro Guzman, 2014

机译：具有优化的GaAsSbN覆盖层的InAs / GaAs量子点的长波长室温发光
7. Temperature-dependent modulated reflectance of InAs/InGaAs/GaAs quantum dots-in-a-well infrared photodetectors [O] . Nedzinskas R, Cechavicius B, Rimkus A, 2015

机译：Inas / InGaas / Gaas量子点在井内红外光电探测器的温度依赖性调制反射率
8. Multi-stack InAs/InGaAs Sub-monolayer Quantum Dots Infrared Photodetectors. [R] . A. V. Barve J. O. Kim S. Adhikary S. Sengupta Y. D. Sharma 2013

机译：多堆Inas / InGaas亚单层量子点红外光电探测器。

High temperature operated (~250 K) photovoltaic-photoconductive(PV-PC) mixed-mode InAs/GaAs quantum dot infrared photodetector

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