Three dimensional CMOS integrated circuits on large grainpolysilicon films

摘要

In this paper, we report high performance three-dimensional (3-D)CMOS integrated circuits. The first layer of transistors is fabricatedon Silicon-on-Insulator (SOI) and second layer is fabricated onlarge-grain polysilicon-on-insulator (LPSOI) film, with oxide as theinterlayer dielectric. The LPSOI film is formed by there-crystallization of amorphous silicon through metal-induced lateralcrystallization (MILC) at an elevated temperature. Compared with theconventional 2-D CMOS SOI low-voltage circuit, 3D circuit showssignificant reduction in circuit area, shorter propagation delay andlower dynamic power consumption