SiON/Ta₂O₅/TiN gate-stack transistor with 1.8nm equivalent SiO₂ thickness

摘要

SiON/Ta₂O₅ stacked gate dielectric exhibits3-5 orders smaller leakage current than SiO₂ at 1.8 nm, whilethe transistor characteristics such as mobility, I_d-V_g, and I_d-V_d, are similar to those ofSiO₂ transistor. N-channel MOSFET with equivalent SiO₂ thickness down to 1.8 nm (1.4 nm equivalent due to elimination ofpoly-Si depletion) is demonstrated. Process effects are also studied foroptimum process condition