首页> 外文会议>Electron Devices Meeting, 1998. IEDM '98 Technical Digest., International >Radical oxygen (O*) process for highly-reliableSiO2 with higher film-density and smoother SiO2/Siinterface
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Radical oxygen (O*) process for highly-reliableSiO2 with higher film-density and smoother SiO2/Siinterface

机译:自由基氧(O * )工艺高度可靠SiO 2 具有更高的膜密度和更光滑的SiO 2 / Si接口

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It has been clarified that the radical oxidation with the oxygenremote plasma improves the electrical reliability of the SiO2films, compared with the dry oxidation. By TEM observation andX-ray-scattering-reflectivity spectroscopy it was demonstrated that, inthe radical oxides, planarization of the SiO2/Si(100)interface and densification of the SiO2 films due torepairing of the SiO2 network were realized, compared withthose in the dry oxides. Moreover, it was also found that the radicaloxidation can realize a reliable SiO2 in the lower oxidationtemperatures even down to 700° C
机译:已经澄清了与氧气的自由基氧化 远程等离子体可提高SIO 2 的电气可靠性 薄膜,与干氧化相比。通过TEM观察和 X射线散射反射率光谱证明,在 自由基氧化物,SiO 2 / si(100)的平坦化 SiO 2 薄膜的界面和致密化 与...相比,实现了SIO 2 网络的修复 那些在干氧化物中的那些。此外,还发现激进的 氧化可以在较低氧化中实现可靠的SiO 2 温度均匀降至700°C

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