E-beam re-aligned HBTs and a new broadband MMIC power amplifierusing bathtub as heat sink

摘要

A benchmark X-band AlGaAs-GaAs HBT MMIC power amplifier with 7 Woutput power, 14 dB gain and greater than 50% efficiency has beenfabricated using a base-to-emitter re-aligned approach based on anelectron-beam, direct-write technique. A novel flipside bathtub andmetallization technology provides a practical means to reduce thethermal resistance of HBT cells and greatly enhance the microwave powerperformance