Most promising metal-to-metal antifuse based 10 nm-thickp-SiN_x film for high density and high speed FPGA application

摘要

A novel metal-to-metal antifuse has been developed for highlyreliable and high performance 3.3 V operated FPGAs. Dielectric breakdownreliability is remarkably improved by using amorphous-like WSi_x film as a bottom electrode having extremely smooth surface.Sufficient low ON-resistance (8.2 Ω) and low programming voltage(9 V) can be also obtained in the metal-to-metal antifuses having WSi_x/SiN_x(10 nm)/TiN structure while keepingsufficient OFF-state reliability. By using WSi_x/SiN_x/Al-Cu structure, lowest ON-resistance (2 Ω) can beobtained. These metal-to-metal antifuse structures are very promisingfor next generation FPGAs