首页> 外文会议>Electron Devices Meeting, 1994. IEDM '94. Technical Digest., International >New (super) self aligned MOS controlled thyristors, (S)SAMCTs,switching 20 A at 4 kV
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New (super) self aligned MOS controlled thyristors, (S)SAMCTs,switching 20 A at 4 kV

机译:新的(超级)自对准MOS控制晶闸管(S)SAMCT,在4 kV时切换20 A

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New MOS controlled thyristor structures, called (Super) SelfAligned MOS Controlled Thyristors, (S)SAMCTs, have been fabricated andcharacterized. A simplified cathode structure in which all criticallayers are self aligned enables the fabrication of reliable large areadevices with reduced technology complexity. Small experimental devicesshow equivalent electrical performance compared to conventional MCTs.Successfully fabricated large area (1 cm-2) SAMCTs are ableto turn off 20 A at 4 kV in 5 μs under inductive load without anysnubber
机译:新的MOS控制晶闸管结构,称为(超级)自 对准的MOS控制晶闸管(S)SAMCT已制造出来, 表征。简化的阴极结构,其中所有关键 层是自对准的,可以制造可靠的大面积 技术复杂度降低的设备。小型实验装置 与传统MCT相比,具有相同的电气性能。 成功制造的大面积(1 cm -2 )SAMCT能够 无感地在5 s内在4 kV的电压下于5 s内关断20 A 缓冲器

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