Realization and performance of quarter micron feature sizeInGaAs/InP MSM photodetector

摘要

A high-speed quarter-micron feature sizeIn_0.53Ga_0.47As metal-semiconductor-metal (MSM)photodetector was fabricated on InP for integrated optoelectronicapplications. The photodetector material was grown by molecular beamepitaxy and processed by direct e-beam lithography. The intrinsicdetector is expected to have a 3-dB bandwidth exceeding 60 GHz. Themeasured extrinsic bandwidth limited by parasitic bonding pads andpackage capacitance is approximately 30 GHz. The dark current for thisdetector is 1.0 μA at 1.25 V bias. Without an antireflectiondielectric coating, the photodetector responsivity exceeds 0.15 A/W. Anovel optical mixing technique was used for frequency responsecharacterization of this device