A novel DC measurement method for the accurate extraction ofbipolar resistive parasitics

摘要

A novel DC method for determining the components of seriesresistance in bipolar transistors is presented. As a DC technique, itshows unprecedented accuracy as demonstrated by its application to bothmetal-contacted heterojunction transistors and more conventional bipolarjunction transistors. The measurement error was minimized by using asingle double-base Kelvin-tapped transistor to extract all components ofseries resistance. The present work indicates that past methods forcalculating the bias dependence of series resistances in bipolar devicesare incorrect. Therefore, a correct expression for the bias-dependentintrinsic base resistance is also presented