A novel DC measurement method for the accurate extraction of bipolar resistive parasitics

摘要

A novel DC method for determining the components of series resistance in bipolar transistors is presented. As a DC technique, it shows unprecedented accuracy as demonstrated by its application to both metal-contacted heterojunction transistors and more conventional bipolar junction transistors. The measurement error was minimized by using a single double-base Kelvin-tapped transistor to extract all components of series resistance. The present work indicates that past methods for calculating the bias dependence of series resistances in bipolar devices are incorrect. Therefore, a correct expression for the bias-dependent intrinsic base resistance is also presented.