首页> 外文会议>Electron Devices Meeting, 1985 International >Characterization of Si/SiO2interface degradation due to hot-carrier injection

【24h】

Characterization of Si/SiO2interface degradation due to hot-carrier injection

机译：热载流子注入导致Si / SiO 2 界面降解的表征

获取原文

页面导航

摘要
著录项
相似文献
相关主题

摘要

Short-channel length MOSFETs fabricated by various n-channel Si-gate technologies have been subjected to dc and pulse aging conditions. The degradation due to injection of hot-holes is found to be a self- limiting process, dictated by the dynamics of hole-trapping and their conversion to fast-states.

机译：由各种n沟道Si-gate技术制造的短沟道长度MOSFET经受了直流和脉冲老化条件。发现由于注入空穴而引起的降解是一个自我限制的过程，这是由空穴俘获的动力学及其向快速态的转化所决定的。

著录项

来源
《Electron Devices Meeting, 1985 International 》||p.52-55|共4页
会议地点
作者
Sabnis A.G.; Nelson J.T.;
展开▼
作者单位

展开▼
会议组织
原文格式 PDF
正文语种
中图分类
关键词

相似文献

外文文献
中文文献
专利

1. LOWER BOUNDS FOR SUP+INF AND SUP*INF AND AN EXTENSION OF CHEN-LIN RESULT IN DIMENSION 3 [J] . Samy Skander Bahoura 数学物理学报（英文版） . 2008 ,第004期
2. The inf luence of soil drying- and tillage-induced penetration resistance on maize root growth in a clayey soil [J] . LIN Li-rong, HE Yang-bo, CHEN Jia-zhou 农业科学学报：英文版 . 2016 ,第005期
3. Inf luence of Spirulina platensis exudates on the endocrine and nervous systems of a mammalian model [J] . Samah, Mamdouh, Mohamed, 亚太热带生物医学杂志：英文版 . 2015 ,第006期
4. xN y and SiO 2 dielectric layers and rear surface passivation by using SiO 2/SiO xN y stack layers with screen printed local Al-BSF for c-Si solar cells]]> [J] . Nagarajan Balaji, Huong Thi Thanh Nguyen, Cheolmin Park, Current applied physics: the official journal of the Korean Physical Society . 2018 ,第1期

机译：<！[CDATA [SIO x n Y 和SIO 2 介电层和后表面钝化使用SIO 2 / SIO X N Y 堆叠图层，带有C-Si太阳能电池的屏幕印刷本地AL-BSF]]>
5. Thermally induced degradation of condensation-grown (100)Ge0.75Si0.25/SiO2 interfaces revealed by electron spin resonance [J] . Kepa J., Stesmans A., Afanasev V.V. Applied Physics Letters . 2013 ,第12期

机译：电子自旋共振揭示的热致降解缩合生长的（100）Ge 0.75 Si 0.25 / SiO 2 界面
6. 2O 5-SiO 2-Li 2O-Fe 2O 3 bioactive glasses: The effect of Li 2O-Fe 2O 3 content on the structure and in-vitro bioactivity]]> [J] . S. Arabyazdi, A. Yazdanpanah, A. Ansari Hamedani, Journal of Non-Crystalline Solids: A Journal Devoted to Oxide, Halide, Chalcogenide and Metallic Glasses, Amorphous Semiconductors, Non-Crystalline Films, Glass-Ceramics and Glassy Composites . 2019 ,第期

机译：<！[cdata [cao-p的合成和表征：inf place =“post”> 2 o 5 -sio < CE：INF PLACE =“POST”> 2 -I 2 O-FE 2 < / CE：INF> O 3 生物活性眼镜：LI 2 O-FE 2 O 3 含量在结构和体外生物活动上的内容]]>
7. Device performance degradation to hot-carrier injection at energies below the Si-SiO2energy barrier [C] . Takeda E., Suzuki N., Hagiwara T. Electron Devices Meeting, 1983 International . -1

机译：在低于Si-SiO 2 势垒的能量下，器件性能下降到注入热载流子
8. Electrical characterization of silicon carbide semiconductor and SiC-SiO(2) interfaces. [D] . Singh, Nitya Nand. 1997

机译：碳化硅半导体和SiC-SiO（2）界面的电特性。
9. Preparation Characterization and Thermal Degradation of Polyimide (4-APS/BTDA)/SiO2 Composite Films [O] . Mansor Bin Ahmad, Yadollah Gharayebi, Mohd. Sapuan Salit, 2012

机译：聚酰亚胺（4-APS / BTDA）/ SiO2复合薄膜的制备表征及热降解
10. Preparation, Characterization and Antimicrobial Activity of Core-satellite Ag/PDA@SiO$inf$2$/inf$@CoFe$inf$2$/inf$O$inf$4$/inf$ Magnetic Composites [O] . LIAO Fan, MA Jian-Qi, GE Hong-Guang 2017

机译：核心卫星AG / PDA的制备，表征和抗微生物活性，SIO $ LT; INF $ GT; 2 $ LT; / INF $ GT; @ COFE $ LT; INF $ GT; 2 $ LT; / INF $ GT; o $ inf $ 4 $ / inf $ 磁性复合材料

Characterization of Si/SiO2interface degradation due to hot-carrier injection

摘要

著录项

相似文献

相关主题

期刊订阅