Low specific on-resistance 400V LDMOST

摘要

A readily integratable high voltage lateral DMOS (LDMOST) has been developed which has both as low or lower specific on-resistance and lower input capacitance as compared to the same breakdown voltage vertical transistors. The LDMOST has been designed for a reverse breakdown voltage VDSS= 400V. The active area of the device is 2 mm2and the drift region length is 26µm. The value of RonA for this transistor is 5.6Ω mm2(Ron= 2.8Ω). The fabrication technology is compatible with that used for bipolar and MOS IC fabrication.