An Ultra-Low Specific ON-Resistance LDMOST With Self-Driven Split Gate

摘要

An -Laterally Double Diffused Metal Oxide Semiconductor Field Effect Transistor (LDMOST) with self-driven split -top gate is studied. By integrating a low-voltage charge pump circuit, a constant positive voltage ( V) is self-generated in the OFF-state and applied to the split -top electrode in the ON-state. This voltage assists the accumulation of electrons near the surface of the -drift region. As a result, the specific ON-resistance is reduced without an increase in effective gate charge . Moreover, the adaptation of the optimum variation lateral doping enables a shorter -drift region length to support the same breakdown voltage. The simulation results indicate that for a 600 V device, the is 20.7 . This is approximately five times smaller than a conventional double REduced SURface Field LDMOST.