Lattice-matched Pb1-xSnxTe/PbTe1-ySeyDH laser diodes operating to 166K

摘要

The first successful use of PbTeSe confinement layers in lattice-matched PbSnTe diode layers to produce low threshold, high operating temperature devices is reported. Devices with thresholds of 500 A/cm2and emitting over 400 µW at 100K, and operating pulsed to 166K have been made from liquid phase epitaxy heterostructures in which the degree of lattice mismatch was below 0.04%. Results on both broad area and etched mesa stripe devices are reported.