Surface and bulk generation currents in ion-implanted MOS structures

摘要

The effect of ion implantation and subsequent annealing on thermal generation current in MOS structures was investigated. For low annealing temperatures the densities of surface and bulk generation centers and the respective dark current components were found to be roughly proportional to the implant dose. For samples annealed at higher temperatures the surface generation current and the surface state density were found to decrease back to the pre-implantation levels. The high-temperature anneal, however, was found to be only partly successful in reducing the bulk generation current.