Surface and Bulk Vibrations in Ion-Implanted Amorphous Silica

摘要

Infrared reflection spectroscopy (IRS) has been used to identify the Si-O vibrational mode and confirm previous assignments of Si-OH, and Si-OD vibrational modes in porous amorphous silica implanted with heavy ions and with H exp + and D exp + ions. The Si-O stretching mode (approx. 1015 cm exp -1 ) is produced by the damage cascade and is seen in all implanted bulk silicas as well as in porous silica. Implantation of porous silica with H exp + and D exp + ions produces bands at approx. 985 cm exp -1 and approx. 960 cm- exp 1 , respectively. The position of all three bands is consistent with O, OH, and OD mass considerations. Implantation of D exp + ions into porous silica containing molecular water and OH exp - groups results in D-H exchange. The Si-OH and Si-OD vibrations are also seen in the bulk fused silica at low H/D fluences. These results suggest that intrinsic E'-type defects in bulk silica and dangling Si bonds at internal surface sites. (ERA citation 05:027457)