Design and performance of two-phase charge-coupled devices with overlapping polysilicon and aluminum gates

摘要

The design, fabrication, operation, performance and analysis of two-phase surface channel, CCD shift registers built using a polysilicon overlapped by aluminum gate technology will be presented. The devices studied consist of previously described 64 and 128-stage shift registers with 1.2 mil center-to-center spacing and a new 500 stage device with 0.8 mil center-to-center spacing, including various channel widths of 5.0, 1.0 and 0.5 mil. Devices were fabricated on a variety of different substrates including