In-N co-doped P-type ZnO films electrical prepared by modified ion beam enhanced deposition

摘要

In-N co-doped P-type ZnO films were prepared on SiO2 and glass substrates by IBED method. The structural, optical and electrical properties were characterized by XRD, XPS, AFM and Hall test. The tests results show that the film was polycrystalline with a preferred (002) orientation. The resistivity, mobility and carrier concentration was 1.6??10-3???·cm, 35.9cm2/V?·S and 1.66??1020/cm3 after annealing at 600?°C for 30min, respectively.