Gas source molecular beam epitaxy of GaInAs and GaInAsP strainedlayer quantum well lasers emitting at 1.5 μm

摘要

The authors report on high-quality MQW (multiquantum well) laserswith compressively and tensile-strained wells grown by gas sourcemolecular beam epitaxy (GSMBE). Photocurrent and photoluminescenceexperiments show narrow and intense lines for compressively strainedstructures and broad spectra, without excitonic lines fortensile-strained quantum wells. These observations can be explained bythe properties of the band structure. The fabrication ofhigh-performance 1.48-μm Fabry-Perot and 1.55-μm DFB (distributedfeedback) lasers with strained quaternary QWs has been demonstrated.Buried heterostructure lasers have realized by GSMBE with LPE regrowth