Record 47 mV/dec top-down vertical nanowire InGaAs/GaAsSb tunnel FETs

摘要

Pocketed vertical nanowire InGaAs/GaAsSb tunnel FETs (TFET) with sub-threshold swing (SS) reaching 47 mV/dec are demonstrated. The achieved sub-threshold performance is the steepest reported so far for a top-down TFET in the III-V material system. Smooth vertical wires with diameters as narrow as 30 nm are achieved using a CH₄ based dry etch process. Drive current at 0.35 V supply voltage approaches 0.7 μA/μm for a fixed I_off of 1 nA/μm.