First demonstration of vertically-stacked Gate-All-Around highly-strained Germanium nanowire p-FETs

摘要

This paper reports on strained p-type Ge Gate-All-Around (GAA) devices on 300mm SiGe Strain-Relaxed-Buffers (SRB) with improved performance as compared to our previous work. The Q factor is increased to 25, I_on=500μA/μm at I_off=100nA/μm is achieved, approaching the best published results on Ge finFETs. Good NBTI reliability is also maintained. By using the process flow developed for the single nanowire (NW), vertically stacked strained Ge NWs featuring 8nm channel diameter are demonstrated for the first time. A systematic analysis of the strain evolution is conducted on both single and double Ge NWs, demonstrating for the first time 1.7GPa uniaxial-stress along the Ge wire, which originates from the lattice mismatch between the Ge S/D and the Si_0.3Ge_0.7 SRB.