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Hybrid 14nm FinFET - Silicon Photonics Technology for Low-Power Tb/s/mm2 Optical I/O

机译:混合14nm FinFET-用于低功率Tb / s / mm 2 光学I / O的硅光子技术

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We demonstrate a microbump flip-chip integrated 14nm-FinFET CMOS-Silicon Photonics (SiPh) technology platform enabling ultra-low power Optical I/O transceivers with 1.6Tb/s/mm2 bandwidth density. The transmitter combines a differential FinFET driver with a Si ring modulator, enabling 40Gb/s NRZ optical modulation at 154fJ/bit dynamic power consumption in a 0.015mm2 footprint. The receiver combines a FinFET trans-impedance amplifier (TIA) with a Ge photodiode, enabling 40Gb/s NRZ photodetection with -10.3dBm sensitivity at 75fJ/bit power consumption, in a 0.01mm2 footprint. High-quality data transmission and reception is demonstrated in a loop-back experiment at 1330nm wavelength over standard single mode fiber (SMF) with 2dB link margin. Finally, a 4×40Gb/s, 0.1mm2 wavelength-division multiplexing (WDM) transmitter with integrated thermal control is demonstrated, enabling Optical I/O scaling substantially beyond 100Gb/s per fiber.
机译:我们演示了一种微凸块倒装芯片集成的14nm-FinFET CMOS-硅光子(SiPh)技术平台,可实现1.6Tb / s / mm的超低功耗光学I / O收发器 2 带宽密度。该发射器将差分FinFET驱动器与Si环形调制器结合在一起,可在0.015mm的动态功耗下以154fJ / bit的速率实现40Gb / s NRZ光调制 2 脚印。该接收器结合了FinFET跨阻放大器(TIA)和Ge光电二极管,可在0.01mm的功耗下以75fJ / bit的功耗实现-10.3dBm灵敏度的40Gb / s NRZ光电检测。 2 脚印。在具有2dB链路裕量的标准单模光纤(SMF)上,在1330nm波长的回送实验中证明了高质量的数据传输和接收。最后是4×40Gb / s,0.1mm 2 演示了集成了热控制功能的波分复用(WDM)发射器,使每根光纤的光I / O缩放比例大大超过了100Gb / s。

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