A high linearity LNA using 180 nm CMOS technology for S-Band

摘要

In this paper, a single-stage cascode low noise amplifier (LNA) was designed using UMC 180 nm complementary metal oxide semiconductor (CMOS) technology for 2.025-2.12 GHz (S-Band), specifically aimed for cryogenic applications. All transistor gates have electrostatic discharge (ESD) protection. The LNA achieved 15.8 dB gain, +2 dBm IIP3, and 1.6 dB noise figure (NF) at 2.075 GHz drawing 7.66 mA current from a 1.8 V supply. With regard to its counterparts, the LNA performs better in terms of its IIP3 outcome.