Statistical characterization of radiation-induced pulse waveforms and flip-flop soft errors in 14nm tri-gate CMOS using a back-sampling chain (BSC) technique

摘要

A novel BSC circuit with tunable current starved buffers demonstrates higher sensitivity, scalability & accurate statistical characterization of radiation-induced SET pulse waveforms & flip-flop SER in 14nm tri-gate CMOS, thus enabling improved SER estimation & analysis for a range of supply voltages including NTV.