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On the Radiation-Induced Soft Error Performance of Hardened Sequential Elements in Advanced Bulk CMOS Technologies

机译：高级CmOs技术中硬化时序元件辐射诱导软错误性能研究

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Seifert Norbert; Ambrose Vinod; Gill B; Shi Q; Allmon R; Recchia Charles H; Mukherjee S; Nassif N; Krause J; Pickholtz J; Balasubramanian A;
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年度 2010
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1. An Efficient Design of Sequential Digital Circuits to Reduce Soft Errors in Nanoscale CMOS Technology [J] . K. Aditya, M. Sivakumar, B. K. V. Prasad, International Journal of Engineering Studies . 2012,第1期

机译：一种有效的顺序数字电路设计，可减少纳米级CMOS技术中的软错误
2. Low cost soft error hardened latch designs for nano-scale CMOS technology in presence of process variation [J] . Ramin Rajaei, Mahmoud Tabandeh, Mahdi Fazeli Microelectronics & Reliability . 2013,第6期

机译：在工艺变化的情况下，针对纳米级CMOS技术的低成本软错误硬化锁存器设计
3. Radiation-induced soft errors in advanced semiconductor technologies [J] . Baumann R.C. IEEE transactions on device and materials reliability . 2005,第3期

机译：先进半导体技术中的辐射诱发的软错误
4. On the radiation-induced soft error performance of hardened sequential elements in advanced bulk CMOS technologies [C] . Seifert N., Ambrose V., Gill B., IEEE International Reliability Physics Symposium . 2010

机译：先进的块状CMOS技术中硬化顺序元素的辐射诱发的软错误性能
5. Single-Event Upset Technology Scaling Trends of Unhardened and Hardened Flip-Flops in Bulk CMOS [D] . Gaspard, Nelson J., III. 2017

机译：批量CMOS中未硬化和硬化触发器的单事件翻转技术缩放趋势
6. Design of Signal Generators Using Active Elements Developed in I3T25 CMOS Technology Single IC Package for Illuminance to Frequency Conversion [O] . Roman Sotner, Jan Jerabek, Ladislav Polak, 2020

机译：使用I3T25 CMOS技术开发的有源元件设计信号发生器用于单路IC封装实现照度到频率的转换
7. Converting a bulk radiation-hardened BiCMOS technology into a dielectrically-isolated process [O] . M. DeLaus, D. Emily, B. Mappes, 1993

机译：将散装辐射硬化的BICMOS技术转换为介电隔离的过程
8. Radiation-Hardened Bulk CMOS Technology [R] . Dawes, W. R., Habing, D. H. 1979

机译：辐射强化的大容量CmOs技术

On the Radiation-Induced Soft Error Performance of Hardened Sequential Elements in Advanced Bulk CMOS Technologies

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