CMOS integrated circuits; amplifiers; charge pump circuits; low-power electronics; system-on-chip; BBG; FGBB; Vth biasing scheme; body bias generator; cell-based design; core supply voltage; fine-grain body biasing; forward body bias voltages; internal switched-capacitor charge pumping; low power CMOS process; low voltage error amplifier; reverse body bias voltages; size 65 nm; voltage 500 mV to 1.2 V; within-die variability compensation; Capacitors; Charge pumps; Conferences; Generators; Substrates; Threshold voltage; Voltage measurement;
机译:一种新颖的低面积架空直接自适应人体偏置(D-ABB)电路,用于管芯和管芯内变化补偿
机译:从具有4.3 ppm 0; C温度系数的基本电流偏置发生器得出的基于阈值电压差的CMOS电压基准
机译:正偏置温度不稳定性中的负阈值电压漂移和掺钇的HfO_2栅介质的负偏置温度不稳定性的正阈值电压漂移的研究
机译:具有宽度范围的体偏置发生器,以阈值电压为模具可变性补偿
机译:参考电压使用迁移率和阈值电压温度效应的相互补偿。
机译:考虑到高频振荡器电压的全反射棱镜激光陀螺仪偏置的高精度补偿
机译:正向/反向体偏置发生器,具有低至阈值电压的宽电源范围
机译:4H-siC JFET阈值电压体偏置效应的实验和理论研究从25℃到500℃。