Integration of plasmonic device with metal-oxide-semiconductor field-effect transistors

摘要

This paper demonstrates the monolithic integration of a plasmonic device with metal-oxide-semiconductor field-effect transistors (MOSFETs) on a Si substrate. The plasmonic device consists of a waveguide and a detector, and is fabricated by a simple process. We confirmed that surface plasmon polaritons (SPPs) propagate for a distance of 100 μm on the Au surface, and are detected as a photocurrent. In addition, an integrated circuit containing the plasmonic device and the MOSFETs was operated by the photocurrent converted from the SPPs.