230-240 GHz, 30 dB Gain Amplifier in INP-HEMT for Multi-10 Gb/s Data Communication Systems

摘要

In this paper, a multi-stage amplifier in 75-nm InP-HEMT technology is described. To achieve a remarkably high gain in a submillimeter waveband, feedback reduction architectures are proposed. The small signal gain of the fabricated amplifier is 30 dB around 230 GHz, and the 3-dB bandwidth is 228 to 242 GHz. The total power consumption of the amplifier was 130 mW. A modulator and an envelope detector are also implemented in the amplifier to confirm a large signal operation. When 10 Gb/s data is input to modulator, a clear eye-opening waveform from the detector output can be successfully obtained.