Double Recessed GaAs pHEMTs for 20-50 V Power Switching

摘要

A normally-OFF RF pHEMT process is optimized for a blocking voltage in the 20-50V range for power switching ICs. Due to their superior material properties, the intrinsic figure of merit for pHEMT switching devices show an order of magnitude improvement over the state-of-the-art Silicon NMOS transistors and in the same range as lateral GaN HEMTs. In a scenario where innovations in silicon based low voltage power transistors have saturated, this approach is a new way of breaking the paradigm and making large leaps in performance.