Tunnel Transistors for Low Power Logic

摘要

Tunnel transistor (TFET) as steep slope device to enable supply voltage scaling is explored at the device level as well as circuit level. Hetero-junction TFET is demonstrated with high drive current and high on-off current ratio. Hetero-junction TFETs with scaled device geometry outperform Si FINFET at Vcc < 0.3V. Design considerations of TFET based circuits for logic applications are investigated and performance benchmarked with Si FinFET technology.