Stability Improvement of Solution Processed Amorphous In-Zn-O Thin-Film Transistors via Low Temperature Solution Processed Passivation

摘要

Since 2004, amorphous oxide semiconductors (AOS) have been widely explored due to their remarkableproperties which are high electrical characteristics, low fabrication temperature, and large area deposition.However, unpassivated AOS thin film transistors (TFTs) show degradation in important transistor parameterssuch as threshold voltage (V_(th)) when exposed to ambient atmosphere. We already reported the performanceof non-photosensitive polysilsesquioxane (PSQ) as an effective passivation layer for AOS TFTs.Nevertheless throughout the fabrication steps, PSQ film required dry-etching process for contact holeformation which lead to this work, where we explore the potential of photosensitive-type polysilsesquioxane(P-PSQ) that skips several steps that can induce TFT degradation. Photo-initiator was incorporated withhybrid PSQ film composed of SiO polymer backbone with methyl and phenyl alkyl groups. P-PSQ has beendemonstrated as an effective barrier for AOS TFTs at temperatures as low as 180 ̊C.