Influence of Rubidium Treatment on the Electronic Properties of Cu(In,Ga)Se2 Solar Cells with Different Ga Content

摘要

Recently, Cu(In, Ga)Se2 solar cells have reached a conversioneffciency of 22%. To achieve such a high performance,Alkali-Post Deposition Treatment (PDT) has beenproven necessary. Consequently, the effects of Alkali-PDThave been widely investigated over the past years and itis known that the effciency and the open-circuit voltage(Voc) increase following the Alkali treatment. So far, Rubidium(Rb) has shown the most promising results. Nevertheless,the influence of Rubidium on defects inside CIGScells and thus on the device performance is still not fullyunderstood. In this work, we investigate the impact ofRbF-PDT on CIGS samples with different [Ga]/([Ga]+[In])ratio or GGI(namely 0.3, 0.6 and 0.73 with a deviationof +/- 0.03).