Electronic and optical properties of Dirac semimetals in InAs/GaInSb superlattice nanostructures

摘要

There is a growing interest in quantum materials and technologies that can enable future energy-efficient electronic andphotonic devices and emerging fields such as quantum computing. Topological insulators and Dirac semimetals (DSMs)are promising classes of materials that could provide new research directions toward these targets. In this work, we discusstechnological aspects of creating a linear energy dispersion spectrum of charge carriers in conventional semiconductormaterials and report on the experimental realization of topological DSMs in nanostructurally engineered zero-gapInAs/GaInSb superlattices (SLs).