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A 51.5 - 64.5 GHz Active Phase Shifter Using Linear Phase Control Technique With 1.4° Phase resolution in 65-nm CMOS

机译:在65nm CMOS中使用线性相位控制技术,相位分辨率为1.4°的51.5-64.5 GHz有源移相器

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This paper presents a V-band active phase shifter using proposed linear phase control technique with 1.4° phase step in 65-nm CMOS technology. Different from conventional active phase shifter, the linear phase control technique achieves a linear relationship between output phase and control signals. It makes the control of output phase more accurate and greatly improves the phase resolution. Furthermore, a current-reuse technique is used to improve gain in mm-wave frequency. The measurement results show that the measured 3-dB bandwidth of 51.5 ~ 64.5 GHz is achieved. The measured RMS phase error of 8-bit phase resolution is 0.5° ~ 1.2° in 3-dB bandwidth and the measured RMS gain variation error is 0.17 ~ 0.25 dB. The measured input-referred P1dB at maximum gain phase states is -5 dBm. The chip consumes 16.9 mA from 1.2 V voltage supply and the core area of the phase shifter is 720 um × 560 um.
机译:本文提出了一种V波段有源移相器,它采用了建议的线性相位控制技术,在65nm CMOS技术中具有1.4°的相位步进。与传统的有源移相器不同,线性相位控制技术实现了输出相位和控制信号之间的线性关系。它使输出相位的控制更加精确,并大大提高了相位分辨率。此外,使用电流重用技术来提高毫米波频率的增益。测量结果表明,可以实现51.5〜64.5 GHz的测量3-dB带宽。在3 dB带宽内,测得的8位相位分辨率的RMS相位误差为0.5°〜1.2°,而RMS增益变化误差为0.17〜0.25 dB。在最大增益相位状态下测得的输入参考P1dB为-5 dBm。该芯片从1.2 V电压电源消耗16.9 mA电流,移相器的核心面积为720 um×560 um。

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