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A 27–42-GHz Low Phase Error 5-Bit Passive Phase Shifter in 65-nm CMOS Technology

机译:65-NM CMOS技术中的27-42GHz低相位误差5位无源移液器

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摘要

A 27-42-GHz 5-bit passive switching phase shifter is presented using 65-nm CMOS technology for the fifth generation (5G) applications. In the 180 degrees phase shift bit, a reflection-type-based biphase modulator topology is developed to achieve good phase shifting performance over a wide bandwidth. The measured insertion loss (IL) of all 32 states is 12.4 +/- 1.2 dB at 39 GHz and 11.4 +/- 2.3 dB at 28 GHz with zero dc power. The phase shifter demonstrates an ultralow root mean square (rms) phase error of 0.7 degrees and a low rms amplitude error of 0.8 dB at 37 GHz with an inherent digital phase-control mechanism. The rms phase error is less than 3.8 degrees and the rms amplitude error is less than 2.1 dB from 27 to 42 GHz.
机译:使用65nm CMOS技术为第五代(5G)应用提供27-42-GHz 5位无源切换液位器。在180度相移位中,开发了基于反射类型的双相调制器拓扑,以在宽带宽上实现良好的相位移位性能。所有32个态的测量损耗(IL)为39 GHz和11.4 +/- 2.3 dB,28 GHz为零直流电源。相移器演示了0.7度的超低均方(RMS)相位误差,并且具有0.8dB的低RMS幅度误差,具有固有的数字相位控制机制。 RMS相位误差小于3.8度,RMS幅度误差小于27到42 GHz的2.1 dB。

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