Low power in-memory computing based on dual-mode SOT-MRAM

摘要

In this paper, we propose a novel Spin Orbit Torque Magnetic Random Access Memory (SOT-MRAM) array design that could simultaneously work as non-volatile memory and implement a reconfigurable in-memory logic (AND, OR) without add-on logic circuits to memory chip as in traditional logic-in-memory designs. The computed logic output could be simply read out like a normal MRAM bit-cell using the shared memory peripheral circuits. Such intrinsic in-memory logic could be used to process data within memory to greatly reduce power-hungry and long distance data communication in conventional Von-Neumann computing systems. We further employ in-memory data encryption using Advanced Encryption Standard (AES) algorithm as a case study to demonstrate the efficiency of the proposed design. The device to architecture co-simulation results show that the proposed design can achieve 70.15% and 80.87% lower energy consumption compared to CMOS-ASIC and CMOL-AES implementations, respectively. It offers almost similar energy consumption as recent DW-AES implementation, but with 60.65% less area overhead.