Self-aligned carbon nanotube transistors with novel chemical doping

摘要

We report an unconventional chemical p- and n- doping scheme utilizing novel materials and a charge transfer mechanism to obtain air-stable, self-aligned, unipolar carbon nanotube transistors. This scheme in addition to introducing the tunability of the threshold voltage V_th, increases the drive current 2-3 orders of magnitude, transforms CNFET from ambipolar to unipolar, suppresses minority carrier injection and yields an excellent I_on/I_off ratio of 106.