High performance and high reliability polysilicon thin-film transistors with multiple nano-wire channels

摘要

We have investigated the lightly-doped drain (LDD) polysilicon thin-film transistors (poly-Si TFTs) with a series of multi-channel with different widths. The ten 67 nm-wide split channels TFT has best gate control due to its tri-gate structure, and has lowest poly-Si grain boundary defects, which were passivated by NH₃ plasma effectively due to its split nano-wires structure. The proposed TFT exhibits high performance electrical characteristics, such as a high ON/OFF current ratio (> 109), a steep subthreshold slope (55) of 137 mV/decade, an absence of drain-induced barrier lowering (DIBL), suppressed kink-effect, and superior reliability.