Enhanced ballisticity in nano-MOSFETs along the ITRS roadmap: a Monte Carlo study

摘要

In this work we have simulated the I_ON and its ballistic limit I_BL of MOSFETs designed according to the 2003 roadmap down to the 45 nm node, by using a full-band, self-consistent Monte Carlo simulator with quantum mechanical corrections. Our results show that scattering plays an important role by limiting the current for gate length down to at least 14 nm; the impact of quasi-ballistic transport increases for L_G below approximately 50 nm and contribute most part of the I_ON improvements related to scaling. Thanks to a lower transversal electric field, the DG SOI MOSFETs with low channel doping allow to get closer to the ballistic limit than bulk counterparts.