A nonlinear HEMT model for the design of frequency doubler andmixer circuits

摘要

This paper presents a nonlinear transistor model for millimeterwave HEMT devices. The model has been implemented in both parameterextraction and commercial circuit simulation software. It takes intoaccount the nonlinearities of the gate-source and the gate-draincapacitances, and it allows accurately modeling of the transconductanceas a function of the gate-source voltage. The model has been validatedusing a large-signal measurement system. Several nonlinear circuitscomprising frequency doublers, oscillators and mixers have been designedand the measured results are in good agreement to the nonlinearsimulation