Increased lifetime of aluminum-free LEDs on Si substrates grown byMOCVD

摘要

An InGaP layer on a Si substrate grown by metalorganic chemicalvapor deposition exhibits a mirror-like surface morphology, dark spotdensity of 1×107 cm-2 and 77 Kphotoluminescence peak wavelength of 645.5 nm. In comparison with aconventional Al-contained AlGaAs/GaAs light-emitting diode (LED) on a Sisubstrate, an Al-free LED on a Si substrate has no significant growth ofdark-line defects. As a result, an increased lifetime has been achievedin an Al-free LED on a Si substrate