Step bunching of InP caused by heavy doping of Se in metalorganicchemical vapor deposition and its application to device fabrication

摘要

We have found that step bunching occurs in heavily Se doped InP,grown by MOCVD, for both (001) and (111)B planes and that it occurs witha lower Se source gas flow rate for the (111)B plane than for the (001)plane. Using this heavy Se doping, we have successfully fabricated novelplanar buried heterostructure lasers on p-InP substrates, in which theSe-doped n-InP current blocking layer does not make contact with then-InP cladding layer