High performance ALD HfO₂-Al₂O₃ laminate MIM capacitors for RF and mixed signal IC applications

摘要

In this paper, a high performance ALD HfO₂-Al₂O₃ laminate metal-insulator-metal (MIM) capacitor is demonstrated for the first time with high capacitance density of 12.8 fF/μm2 from 10 kHz to 20 GHz, low leakage current of 7.45×10-9 A/cm2 at 2 V, low VCC (voltage coefficients of capacitance), and excellent reliability. The superior electrical properties and reliability suggest that the ALD HfO₂-Al₂O₃ laminate is a very promising material for MIM capacitors for Si RF and mixed signal IC applications.