Fabrication of GaSb-based distributed Bragg reflector semiconductor lasers

摘要

We report on the fabrication of GaSb-based type-I quantum well distributed Bragg reflector (DBR) lasers operating in the2-μm region. Second-order metallic gratings of chromium are patterned by electron beam lithography. The fabricated DBRlasers emit a single-mode continuous wave at 2.04 μm. The side mode suppression ratio (SMSR) is as high as 35dB witha narrow line-width of 37MHz. The devices show a stable single mode operation with current tuning rate of 0.006nm/mA.