首页> 外文会议>Society of Photo-Optical Instrumentation Engineers;Conference on High-Power Diode Laser Technology XVII >High Brightness Diodes and 600 W 60 Efficient Low SWaP Fiber-coupled Package Enabled by Reduced-mode (REM) Diodes
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High Brightness Diodes and 600 W 60 Efficient Low SWaP Fiber-coupled Package Enabled by Reduced-mode (REM) Diodes

机译:高亮度二极管以及通过降模(REM)二极管实现的600 W和60%的高效低SWaP光纤耦合封装

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In this paper, we show results of further brightness improvement and power-scaling enabled by both the rise inchip brightness/power and the increase in number of chips coupled into a given numerical aperture. We report a new chiptechnology using x-REM design providing a record ~340 W output from a 2×12 nLIGHT element® in 105 μm diameterfiber. These diodes will allow next generation of fiber-coupled product capable of >250W output power from 105μm/0.15 NA beam at 915 nm. There is also an increasing demand for low SWaP fiber-coupled diodes for enablingcompact high energy laser systems for defense applications. We have demonstrated 600 watts and 60% efficiency at15C in 220 μm/0.22 NA fiber resulting in specific mass and volume of 0.44 kg/kW and of 0.5 cm3/W respectively.
机译:在本文中,我们展示了通过同时提高亮度可以进一步提高亮度和功率缩放的结果 芯片亮度/功率以及耦合到给定数值孔径中的芯片数量的增加。我们报告了新的芯片 采用x-REM设计的技术从直径为105μm的2×12 nLIGHTelement®提供了创纪录的〜340 W输出 纤维。这些二极管将允许下一代光纤耦合产品从105输出功率大于250W 915 nm处的μm/ 0.15 NA光束人们还越来越需要低SWaP光纤耦合二极管来实现 用于国防应用的紧凑型高能激光系统。我们已经展示了600瓦的功率和60%的效率 15℃在220μm/ 0.22 NA纤维中产生的比质量和体积分别为0.44 kg / kW和0.5 cm3 / W。

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